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The argon fluoride laser (ArF laser) is a particular type of excimer laser,〔Basting, D. and Marowsky, G., Eds., ''Excimer Laser Technology'', Springer, 2005.〕 which is sometimes (more correctly) called an exciplex laser. With its 193 nanometer wavelength, it is a deep ultraviolet laser, which is commonly used in the production of semiconductor integrated circuits, eye surgery, micromachining, and scientific research. The term excimer is short for "excited dimer", while exciplex is short for "excited complex". An excimer laser typically uses a mixture of a noble gas (argon, krypton, or xenon) and a halogen gas (fluorine or chlorine), which under suitable conditions of electrical stimulation and high pressure, emits coherent stimulated radiation (laser light) in the ultraviolet range. ArF (and KrF) excimer lasers are widely used in high-resolution photolithography machines, one of the critical technologies required for microelectronic chip manufacturing. Excimer laser lithography〔Jain, K. "Excimer Laser Lithography", SPIE Press, Bellingham, WA, 1990.〕 has enabled transistor feature sizes to shrink from 800 nanometers in 1990 to 22 nanometers in 2012.〔La Fontaine, B., ("Lasers and Moore's Law" ), SPIE Professional, Oct. 2010, p. 20.〕 ==Theory== An argon fluoride laser absorbs energy from a source, causing the argon gas to react with the fluorine gas producing argon monofluoride, a temporary complex, in an excited energy state: :2 Ar + → 2 ArF The complex can undergo spontaneous or stimulated emission, reducing its energy state to a metastable, but highly repulsive ground state. The ground state complex quickly dissociates into unbound atoms: :2 ArF → 2 Ar + The result is an exciplex laser that radiates energy at 193 nm, which lies in the far ultraviolet portion of the spectrum, corresponding with the energy difference of 6.4 electron volts between the ground state and the excited state of the complex. 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Argon fluoride laser」の詳細全文を読む スポンサード リンク
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